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    首頁 >STG>規(guī)格書列表

    型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

    STGB10HF60KD

    10 A - 600 V - short-circuit rugged IGBT

    Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

    文件:477.41 Kbytes 頁數(shù):13 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STGB10HF60KDT4

    絲?。?a target="_blank" title="Marking" href="/gb10hf60kd/marking.html">GB10HF60KD;Package:D2PAK;10 A - 600 V - short-circuit rugged IGBT

    Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

    文件:477.41 Kbytes 頁數(shù):13 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STGB10HF60KDT4

    絲?。?a target="_blank" title="Marking" href="/gb10hf60kd/marking.html">GB10HF60KD;Package:D2PAK;10 A - 600 V - short-circuit rugged IGBT

    Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

    文件:477.41 Kbytes 頁數(shù):13 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STGB10M65DF2

    絲印:G10M65DF2;Package:D2PAK;Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D2PAK package

    Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

    文件:1.14052 Mbytes 頁數(shù):19 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STGB10M65DF2_V01

    Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D2PAK package

    Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

    文件:1.14052 Mbytes 頁數(shù):19 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STGB10N60L

    N-CHANNEL 10A - 600V D2PAK LOGIC LEVEL IGBT

    N-CHANNEL 10A - 600V D2PAK LOGIC LEVEL IGBT ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) ■ VERY LOW ON-VOLTAGE DROP (Vcesat) ■ LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT) ■ HIGH CURRENT CAPABILITY ■ OFF LOSSES INCLUDE TAIL CURRENT ■ SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX)

    文件:88.68 Kbytes 頁數(shù):8 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STGB10NB37LZ

    N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT

    DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitt

    文件:92.54 Kbytes 頁數(shù):8 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STGB10NB37LZ

    絲?。?a target="_blank" title="Marking" href="/gb10nb37lz/marking.html">GB10NB37LZ;Package:D2PAK;10 A - 410 V internally clamped IGBT

    Description This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat

    文件:751.46 Kbytes 頁數(shù):15 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STGB10NB37LZ_V01

    10 A - 410 V internally clamped IGBT

    Description This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat

    文件:751.46 Kbytes 頁數(shù):15 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STGB10NB37LZT4

    絲印:GB10NB37LZ;Package:D2PAK;10 A - 410 V internally clamped IGBT

    Description This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat

    文件:751.46 Kbytes 頁數(shù):15 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    詳細(xì)參數(shù)

    • 型號(hào):

      STG

    • 制造商:

      SAMHOP

    • 制造商全稱:

      SAMHOP

    • 功能描述:

      Dual N-Channel E nhancement Mode F ield E ffect Transistor

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
    SAMHOP
    2024+
    TSSOP8
    50000
    原裝現(xiàn)貨
    詢價(jià)
    STG
    25+
    MSOP8
    5000
    百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
    詢價(jià)
    SAMHOP
    17+
    MSOP-8
    6200
    100%原裝正品現(xiàn)貨
    詢價(jià)
    SAMHOP
    23+
    TSSOP8
    5000
    原裝正品,假一罰十
    詢價(jià)
    SAMHOP
    2016+
    TSSOP8
    670
    只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
    詢價(jià)
    SAMHOP
    23+
    TSSOP8
    8560
    受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
    詢價(jià)
    SAMHOP
    19+
    TSSOP8
    8650
    原裝正品,現(xiàn)貨熱賣
    詢價(jià)
    SAMHOP
    20+
    TSSOP8
    2960
    誠信交易大量庫存現(xiàn)貨
    詢價(jià)
    SAMHOP
    25+
    TSSOP8
    15000
    全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
    詢價(jià)
    SAMHOP
    25+
    TSSOP8
    100
    普通
    詢價(jià)
    更多STG供應(yīng)商 更新時(shí)間2026-1-22 15:29:00

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