isc N-Channel MOSFET Transistor

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N-channel 600 V - 0.25 typ., 13 A FDmesh II Power MOSFET (with fast diode) in D2PAK

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N-channel 600 V, 0.25 Ohm typ., 13 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package

These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal f The worldwide best R\nDS(on)* area amongst the fast recovery diode devices\n100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance\nExtremely high dv/dt and avalanche capabilities;

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N-channel 600 V, 0.27 廓, 13 A MDmesh??II Power MOSFET in TO-220, TO-220FP, TO-247, D?PAK and I?PAK

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.285Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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N-channel 600 V, 0.260 廓, 6 A PowerFLAT??8x8 HV MDmesh??II Power MOSFET

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