isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.95Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.45 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

Low gate input resistance

文件：865.37 Kbytes 頁(yè)數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N溝道600 V、0.86 Ohm典型值、5 A MDmesh M2功率MOSFET，TO-220FP封裝

This device is an N-channel Power MOSFET developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore sui ? Extremely low gate charge \n? Lower RDS(on)x area vs previous generation \n? Low gate input resistance \n? 100% avalanche tested \n? Zener-protected;

ST

意法半導(dǎo)體

Extremely low gate charge

文件：310.76 Kbytes 頁(yè)數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 650V (D-S) Power MOSFET

文件：1.10918 Mbytes 頁(yè)數(shù)：10 Pages

VBSEMI

微碧半導(dǎo)體

Extremely low gate charge

文件：1.20522 Mbytes 頁(yè)數(shù)：21 Pages

STMICROELECTRONICS

意法半導(dǎo)體