isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) -RDS(on) = 125mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.65 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel 200V - 0.10廓 -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. Features ■ Excep

文件：505.84 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導體

N-channel 200 V, 0.10 廓, 18 A DPAK, TO-220, TO-220FP low gate charge STripFET??Power MOSFET

文件：915.56 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導體

N-Channel 200 V (D-S) MOSFET

文件：1.03001 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

N溝道200 V、0.10 Ohm典型值、18 A StripFET功率MOSFET，TO-220FP封裝

This Power MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters. ? Exceptional dv/dt capability \n? 100% avalanche tested \n? Low gate charge;

ST

意法半導體