isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 24A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 0.14Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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絲?。?a target="_blank" title="Marking" href="/33n65m2/marking.html">33N65M2；Package：TO-220FP；N-channel 650 V, 0.117 ??typ., 24 A MDmesh??M2 Power MOSFETs in D?PAK, TO-220FP, TO-220 and I?PAK packages

文件：800.37 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

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N溝道650 V、0.117 Ohm典型值、24 A MDmesh M2功率MOSFET，TO-220FP封裝

These devices are N-channel Power MOSFETs developed using MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. ? Extremely low gate charge \n? Excellent output capacitance (Coss) profile \n? 100% avalanche tested \n? Zener-protected;

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N-channel 650 V, 0.117 ??typ., 24 A MDmesh??M2 Power MOSFETs in D?PAK, TO-220FP, TO-220 and I?PAK packages

文件：800.37 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 24A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 0.14Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：284.38 Kbytes 頁數(shù)：2 Pages

ISC

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N-channel 650 V, 0.124 (ohm0 typ., 20 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package

文件：815.69 Kbytes 頁數(shù)：15 Pages

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