isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 150mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.22 Kbytes 頁數(shù)：2 Pages

ISC

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N-channel 600 V, 0.135 typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages

文件：827.38 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

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N溝道600 V、0.135 Ohm典型值、22 A MDmesh M2功率MOSFET，TO-220FP封裝

These devices are N-channel Power MOSFETs developed using MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. ? Extremely low gate charge \n? 100% avalanche tested \n? Zener-protected;

ST

意法半導體

N-channel 600 V, 0.135 typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages

文件：827.38 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導體

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency

文件：1.12074 Mbytes 頁數(shù)：21 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.135 Ω typ., 22 A MDmesh? M2 Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? 100% avalanche tested ? Zener-protected Applications ? Switching applications ? LCC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh? M

文件：1.11956 Mbytes 頁數(shù)：21 Pages

STMICROELECTRONICS

意法半導體