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    首頁 >STF4N62K3>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    STF4N62K3

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID=3.8A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

    文件:319.79 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    STF4N62K3

    N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET

    Description These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

    文件:1.06158 Mbytes 頁數(shù):19 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STF4N62K3

    N溝道620 V、1.7 Ohm典型值、3.8 A SuperMESH3(TM) 功率MOSFET,TO-220FP封裝

    These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitab ? 100% avalanche tested \n? Extremely high dv/dt capability \n? Gate charge minimized \n? Very low intrinsic capacitance \n? Improved diode reverse recovery characteristics \n? Zener-protected;

    ST

    意法半導(dǎo)體

    STFI4N62K3

    N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET

    Description These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

    文件:1.06158 Mbytes 頁數(shù):19 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STI4N62K3

    N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET

    Description These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

    文件:1.06158 Mbytes 頁數(shù):19 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STI4N62K3

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID=3.8A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

    文件:282.15 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    技術(shù)參數(shù)

    • Package:

      TO-220FP

    • Grade:

      Industrial

    • VDSS(V):

      620

    • RDS(on)_max(@ VGS=10V)(Ω):

      2

    • Drain Current (Dc)_max(A):

      3.8

    • PTOT_max(W):

      25

    • Qg_typ(nC):

      22

    供應(yīng)商型號品牌批號封裝庫存備注價格
    ST/意法
    25+
    TO220FP
    32360
    ST/意法全新特價STF4N62K3即刻詢購立享優(yōu)惠#長期有貨
    詢價
    ST/意法
    2025+
    TO-220F
    5000
    原裝進(jìn)口,免費送樣品!
    詢價
    STM
    18+/20+
    89600
    TO-220FP-3
    詢價
    ST/意法
    2450+
    TO-220F
    9850
    只做原裝正品現(xiàn)貨或訂貨假一賠十!
    詢價
    STMicroelectronics
    25+
    N/A
    18798
    正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
    詢價
    STMicroelectronics
    24+
    NA
    3000
    進(jìn)口原裝正品優(yōu)勢供應(yīng)
    詢價
    ST
    25+23+
    TO-220
    21346
    絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
    詢價
    ST
    18+
    TO-220F
    85600
    保證進(jìn)口原裝可開17%增值稅發(fā)票
    詢價
    三年內(nèi)
    1983
    只做原裝正品
    詢價
    ST
    19+
    TO-220F
    32000
    原裝正品,現(xiàn)貨特價
    詢價
    更多STF4N62K3供應(yīng)商 更新時間2026-1-22 20:01:00

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