N-channel 650 V - 0.43 廓 - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh? Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

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STMICROELECTRONICS

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P-channel -60 V, 0.13 Ω typ., -10 A STripFET? F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? Low gate drive power loss Applications ? Switching applications

文件：1.20301 Mbytes 頁數(shù)：24 Pages

STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/10p6f6/marking.html">10P6F6；Package：TO-220FP；P-channel -60 V, 0.13 Ω typ., -10 A STripFET? F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? Low gate drive power loss Applications ? Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET? F6 technology, with a new trench gate structure.

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W-Band Faraday Isolator

Description: Model STF-10-S1 is a full Band Faraday isolator that operates from 75 to 110 GHz. The Faraday isolator is constructed with a longitudinal, magnetized ferrite rod that causes a Faraday rotation of the incoming RF signal. The Faraday isolator offers 28 dB typical isolation and 1.5 dB n

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ERAVANT

W-Band Full Waveguide Band Compact Faraday Isolator

Description: Model STF-10-S1-C is a full W band Faraday isolator that operates from 75 to 110 GHz. The Faraday isolator is constructed with a longitudinal, magnetized ferrite rod that causes a Faraday rotation of the incoming RF signal. The compact, robust package is ideal for system integration

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ERAVANT

W-Band, Mini Faraday Isolator, 0.658” Insertion Length

Description: Model STF-10-S1-M is a WR-10 miniature Faraday isolator that operates from 75 to 110 GHz. The mini isolator utilizes a novel magnetic design with precision machined housings to achieve the smallest Faraday isolator package size offered by Eravant. Due to the nature of the magnetic co

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ERAVANT

W-Band, Mini Faraday Isolator, 0.658” Insertion Length

FEATURES Full Band Coverage Low Insertion Loss High Isolation Compact Form Factor Resistant to Stray Magnetic Fields Backside Flange Screw Access APPLICATIONS Test Lab Instrumentations Subassemblies

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ERAVANT

N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET

Description These devices are N-channel Power MOSFETs made using the SuperMESH3? technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH? technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superio

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 525V(Min) -RDS(on) = 0.51Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

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N-channel 600 V, 0.550 typ., 7.5 A MDmesh? M2 EP Power MOSFET in a TO-220FP package

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? Very low turn-off switching losses ? 100 avalanche tested ? Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh? M2 enhanced performance (EP) technology. Thanks to

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STMICROELECTRONICS

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