| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
STF10P6F6 | P-channel -60 V, 0.13 Ω typ., -10 A STripFET? F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? Low gate drive power loss Applications ? Switching applications 文件:1.20301 Mbytes 頁(yè)數(shù):24 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
STF10P6F6 | 絲?。?a target="_blank" title="Marking" href="/10p6f6/marking.html">10P6F6;Package:TO-220FP;P-channel -60 V, 0.13 Ω typ., -10 A STripFET? F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? Low gate drive power loss Applications ? Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET? F6 technology, with a new trench gate structure. 文件:1.20288 Mbytes 頁(yè)數(shù):24 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
STF10P6F6 | P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in TO-220FP package These devices are P-channel Power MOSFETs developed using the STripFET? F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.\n ? Very low on-resistance\n? Very low gate charge? High avalanche ruggedness\n? Low gate drive power loss; | ST 意法半導(dǎo)體 | ST | |
N-Channel 60 V(D-S) MOSFET 文件:1.09165 Mbytes 頁(yè)數(shù):8 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
P-channel 60 V, 0.15 廓 typ., 10 A STripFET??VI DeepGATE??Power MOSFET in DPAK and TO-220 packages Description These devices are P-channel Power MOSFETs developed using the STripFET? F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? Lo 文件:490.86 Kbytes 頁(yè)數(shù):15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
P-channel -60 V, 0.13 Ω typ., -10 A STripFET? F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? Low gate drive power loss Applications ? Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET? F6 technology, with a new trench gate structure. 文件:1.20288 Mbytes 頁(yè)數(shù):24 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
技術(shù)參數(shù)
- Package:
TO-220FP
- Grade:
Industrial
- VDSS(V):
-60
- RDS(on)_max(@ VGS=10V)(Ω):
0.16
- Drain Current (Dc)_max(A):
-10
- PTOT_max(W):
20
- Qg_typ(nC):
6.4
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
STM |
22+ |
1000 |
TO-220FP-3 |
詢價(jià) | |||
ST(意法半導(dǎo)體) |
25+ |
N/A |
22412 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) | ||
STM |
25+ |
TO-220 |
3675 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
22+ |
NA |
3000 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | |||
ST |
22+ |
TO2203 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
STMicroelectronics |
2022+ |
TO-220-3 整包 |
38550 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
STM |
22+ |
TO-220FP-3 |
1000 |
15年光格 只做原裝正品 |
詢價(jià) | ||
STM |
23+ |
TO-220FP-3 |
50000 |
原裝正品 支持實(shí)單 |
詢價(jià) | ||
STM |
22+ |
TO-220FP-3 |
1000 |
全新原裝訂貨1周 |
詢價(jià) | ||
24+ |
N/A |
52000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) |
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更多- XRCGB25M000F3N00R0
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