E-Band Full Waveguide Band Compact Faraday Isolator

FEATURES Full Waveguide Band Operation Moderate Insertion Loss High Isolation Compact Form Factor APPLICATIONS Test Lab Instrumentations Sub-assemblies

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ERAVANT

E-Band, Mini Faraday Isolator, 0.75” Insertion Length

Description: Model STF-12-S1-M is a WR-12 miniature Faraday isolator that operates from 60 to 90 GHz. The mini isolator utilizes a novel magnetic design with precision machined housings to achieve the smallest Faraday isolator package size offered by Eravant. Due to the nature of the magnetic con

文件：352.35 Kbytes 頁(yè)數(shù)：3 Pages

ERAVANT

E-Band, Mini Faraday Isolator, 0.750” Insertion Length

FEATURES Full Band Coverage Low Insertion Loss High Isolation Compact Form Factor Resistant to Stray Magnetic Fields Backside Flange Screw Access APPLICATIONS Test Lab Instrumentations Subassemblies

文件：593.21 Kbytes 頁(yè)數(shù)：3 Pages

ERAVANT

N-channel 100 V, 7.8 m廓 typ., 120 A STripFET??II Power MOSFET in TO-220FP, I?PAKFP, H?PAK-2 and TO-220 packages

Description These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET? III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance. Features ■ Ultra low on-resistance ■ 100 avala

文件：1.21928 Mbytes 頁(yè)數(shù)：23 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Low gate input resistance

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

文件：1.13696 Mbytes 頁(yè)數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.45Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.21 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無錫固電

N-channel 800 V, 0.37, 12 A Zener-protected SuperMESH 5 Power MOSFET in D?PAK, TO-220FP and TO-220 packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.60817 Mbytes 頁(yè)數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/13n80k5/marking.html">13N80K5；Package：TO-220FP；N-channel 800 V, 0.37 Ω typ., 12 A MDmesh? K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247

Features ? Industry’s lowest RDS(on) x area ? Industry’s best FoM (figure of merit) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 techno

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STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 950V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·motor drive,

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ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS= 950V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.55 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無錫固電