SCHOTTKY RECTIFIER

Features ? 150'C TJ operation ? Center tap configuration ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ?

文件：657.83 Kbytes 頁(yè)數(shù)：7 Pages

SMCDIODE

桑德斯微電子

SCHOTTKY RECTIFIER

Features ? 150'C TJ operation ? Center tap configuration ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ?

文件：443.75 Kbytes 頁(yè)數(shù)：7 Pages

SMCDIODE

桑德斯微電子

W-Band Faraday Isolator, 90? Twist Input

Description: Model STF-10-91 is a full band Faraday isolator that operates from 75 to 110 GHz. The Faraday isolator is constructed with a longitudinal, magnetized ferrite rod that causes a Faraday rotation of the incoming RF signal. The Faraday isolator offers 28 dB typical isolation and 1.5 dB n

文件：270.32 Kbytes 頁(yè)數(shù)：3 Pages

ERAVANT

W-Band Full Waveguide Band Compact Faraday Isolator, 90° Twist

Description: Model STF-10-91-C is a full band Faraday isolator that operates from 75 to 110 GHz. The Faraday isolator is constructed with a longitudinal, magnetized ferrite rod that causes a Faraday rotation of the incoming RF signal. The compact, robust package is ideal for system integration an

文件：356.96 Kbytes 頁(yè)數(shù)：3 Pages

ERAVANT

W-Band, Mini Faraday Isolator, 0.658” Insertion Length, 90° Twist

FEATURES Full Band Coverage Low Insertion Loss High Isolation Compact Form Factor Resistant to Stray Magnetic Fields Backside Flange Screw Access 90 Degree Twist APPLICATIONS Test Lab Instrumentations Subassemblies

文件：595.01 Kbytes 頁(yè)數(shù)：3 Pages

ERAVANT

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 1050V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.42 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 620V(Min) -RDS(on) = 0.75Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.23 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-channel 650 V, 0.75 廓 typ., 10 A SuperMESH3??Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages

Description These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

文件：1.30609 Mbytes 頁(yè)數(shù)：21 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages

Description These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

文件：958.74 Kbytes 頁(yè)數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/10n80k5/marking.html">10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 ??typ., 9 A MDmesh??K5 Power MOSFET in a TO-220FP package

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：576.74 Kbytes 頁(yè)數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體