| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-channel 650 V, 0.43 廓 typ., 9 A MDmesh??V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Description These devices are N-channel MDmesh? V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a 文件:1.2819 Mbytes 頁數(shù):25 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Description These devices are N-channel MDmesh? V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a 文件:1.2819 Mbytes 頁數(shù):25 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 500 V, 0.4, 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220 Description These devices are made using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding 文件:675.27 Kbytes 頁數(shù):16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET Description This series of devices is designed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo 文件:470.38 Kbytes 頁數(shù):17 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET Description This series of devices is designed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo 文件:489.4 Kbytes 頁數(shù):18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Description This series of devices is designed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo 文件:641.21 Kbytes 頁數(shù):20 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Description The device is an N-channel FDmesh? II Power MOSFET that belongs to the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching wi 文件:530.46 Kbytes 頁數(shù):18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 650 V, 0.425 廓 typ., 11 A MDmesh??I Power MOSFET in DPAK, TO-220FP, I?PAKFP and TO-220 packages Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit 文件:1.26375 Mbytes 頁數(shù):21 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit 文件:1.26375 Mbytes 頁數(shù):21 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET Description The MDmesh? associates the multiple drain process with the company’s PowerMesh? horizontal layout assuring an outstanding low on resistance. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar 文件:582.11 Kbytes 頁數(shù):14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
技術(shù)參數(shù)
- Width (mm):
5.00
- Height (mm):
2.50
- Inductance (μH):
10.0
- DCR (?):
35.00
- IDC (mA):
1400
- Isat (mA):
1400
- Packing (Reel):
2000
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
SEMTECH |
10+ |
SC70-6 |
1000 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價(jià) | ||
SEMTECH |
2024+ |
原廠原裝 |
50000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
STMicroelectronics |
23+/22+ |
722 |
原裝進(jìn)口訂貨7-10個(gè)工作日 |
詢價(jià) | |||
ST |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營-可開原型號(hào)增稅票 |
詢價(jià) | ||
原廠 |
24+ |
N/A |
10000 |
只做現(xiàn)貨 |
詢價(jià) | ||
ST |
24+ |
N/A |
8000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價(jià) | ||
ST/意法 |
21+ |
TO-247 |
5000 |
優(yōu)勢(shì)供應(yīng) 實(shí)單必成 可開增值稅13點(diǎn) |
詢價(jià) | ||
ST |
24+/25+ |
TO-220F |
50000 |
熱賣原裝現(xiàn)貨庫存質(zhì)量保證,下單秒發(fā)貨,現(xiàn)貨告急先到先得13714450367 |
詢價(jià) | ||
ST/意法半導(dǎo)體 |
24+ |
TO-220FP-3 |
16960 |
原裝正品現(xiàn)貨支持實(shí)單 |
詢價(jià) |
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