| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/10n80k5/marking.html">10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 Ω typ., 9 A MDmesh? K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads Features ? Industry’s lowest RDS(on) x area ? Industry’s best figure of merit (FoM) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 techno 文件：841.46 Kbytes 頁數(shù)：17 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=8A@ TC=25℃ ·Drain Source Voltage -VDSS= 950V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：319.15 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N-CHANNEL 500V - 0.55??- 9A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s 文件：505.53 Kbytes 頁數(shù)：12 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/f10nk50z/marking.html">F10NK50Z；Package：TO-220FP；N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH? Power MOSFET in TO-220FP package Description This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH? technology, achieved through optimization of ST’s well established strip-based PowerMESH? layout. In addition to a significant reduction in onresistance, this device is designe 文件：525.78 Kbytes 頁數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH? Power MOSFET in TO-220FP package Description This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH? technology, achieved through optimization of ST’s well established strip-based PowerMESH? layout. In addition to a significant reduction in onresistance, this device is designe 文件：525.78 Kbytes 頁數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/10nk60z/marking.html">10NK60Z；Package：TO-220FP；N-channel 600 V, 0.65 Ω, 10 A, SuperMESH? Power MOSFET Zener-protected TO-220FP narrow leads Features ■ Extremely high dv/dt capability ■ 100 avalanche tested ■ Gate charge minimized ■ Very good manufacturing reliability Application ■ Switching applications Description The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based Powe 文件：275.83 Kbytes 頁數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 500 V, 0.53 廓, 7 A DPAK, TO-220FP, TO-220 MDmesh??II Power MOSFET Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab 文件：1.1377 Mbytes 頁數(shù)：18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) -RDS(on) = 0.63Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：318.67 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
絲?。?a target="_blank" title="Marking" href="/10nm60n/marking.html">10NM60N；Package：TO-220FP；N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Description These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh? technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product offers improved on-resistanc 文件：907.61 Kbytes 頁數(shù)：17 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印：10NM60ND；Package：TO-220FP；N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode) Description This FDmesh? II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching performance. It is 文件：1.2278 Mbytes 頁數(shù)：19 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
技術(shù)參數(shù)
- Width (mm)：
5.00
- Height (mm)：
2.50
- Inductance (μH)：
10.0
- DCR (?)：
35.00
- IDC (mA)：
1400
- Isat (mA)：
1400
- Packing (Reel)：
2000
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TO-220 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價(jià) | ||
ST(意法) |
23+ |
NA |
20094 |
原裝正品 可支持驗(yàn)貨，歡迎咨詢 |
詢價(jià) | ||
ST |
23+ |
TO-220F |
5000 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
ST |
23+ |
TO-3P |
12800 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
ST/意法 |
16+ |
TO-220 |
289 |
原裝/現(xiàn)貨 |
詢價(jià) | ||
STM |
TO-220 |
6688 |
15 |
現(xiàn)貨庫存 |
詢價(jià) | ||
STMicroelectronics |
21+ |
TO-220FP |
1000 |
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠信經(jīng)營)!! |
詢價(jià) | ||
ST/意法 |
20 |
1000 |
進(jìn)口原裝現(xiàn)貨假一賠萬力挺實(shí)單 |
詢價(jià) | |||
ST/意法半導(dǎo)體 |
2021+ |
TO-220-3 |
1000 |
只做原裝，可提供樣品 |
詢價(jià) | ||
ST |
22+ |
TO-220F |
5000 |
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢(shì) |
詢價(jià) |
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