isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in

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ISC

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絲?。?a target="_blank" title="Marking" href="/f11nm80/marking.html">F11NM80；Package：TO-220FP；N-channel 800 V, 0.35 Ω, 11 A MDmesh? Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220, TO-247

Features ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh? technology, which associates th

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STMICROELECTRONICS

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Three PhaseNeutral Filters For Solar Technology Applications

Three Phase + Neutral Filters Single stage Solar technoloty applications Compact model for saving space Low leakage current

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PREMO

普萊默

N-channel 100 V, 0.009 ohm, 110 A STripFET II Power MOSFET

Description These devices are N-channel Power MOSFET realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom

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STMICROELECTRONICS

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SCHOTTKY RECTIFIER

Features ? 150 ?C TJ operation ? Center tap configuration ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ?

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SMCDIODE

桑德斯微電子

SCHOTTKY RECTIFIER

Features ? 150 ?C TJ operation ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ? Trench MOS Schottky technol

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SMCDIODE

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E-Band Faraday Isolator, 90? Twist Input

Description: Model STF-12-91 is a full band Faraday isolator that operates from 60 to 90 GHz. The Faraday isolator is constructed with a longitudinal, magnetized ferrite rod that causes a Faraday rotation of the incoming RF signal. The Faraday isolator offers 28 dB nominal isolation and 1.5 dB ty

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ERAVANT

E-Band Full Waveguide Band Compact Faraday Isolator, 90° Twist

Description: Model STF-12-91-C is a full band Faraday isolator that operates from 60 to 90 GHz. The Faraday isolator is constructed with a longitudinal, magnetized ferrite rod that causes a Faraday rotation of the incoming RF signal. The compact, robust package is ideal for system integration and

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ERAVANT

E-Band, Mini Faraday Isolator, 0.750” Insertion Length, 90° Twist

FEATURES Full Band Coverage Low Insertion Loss High Isolation Compact Form Factor Resistant to Stray Magnetic Fields Backside Flange Screw Access 90 Degree Twist APPLICATIONS Test Lab Instrumentations Subassemblies

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ERAVANT

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=1200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.69Ω(Max)@VGS= 10V DESCRIPTION ·Switching applications.

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ISC

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