Low gate input resistance

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

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N溝道600 V、0.35 Ohm典型值、11 A MDmesh M2功率MOSFET，TO-220FP封裝

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefor ? Extremely low gate charge \n? Low gate input resistance \n? Zener-protected;

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N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP narrow leads package

This device is an N-channel Power MOSFET developed using MDmesh? M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.\n ? Extremely low gate charge\n? Excellent output capacitance (Coss) profile? 100% avalanche tested\n? Zener-protected;

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Extremely low gate charge

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Low gate input resistance

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

文件：1.13696 Mbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.35 typ., 11 A MDmeshTM M2 Power MOSFET in a TO-220FP ultra narrow leads package

Features ? Extremely low gate charge ? Lower RDS(on) x area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh? M2 technology. Thanks to its strip layout and an improved

文件：655.2 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

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