SCHOTTKY RECTIFIER

? 150 °C TJ operation ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ? Trench MOS Schottky technology ? Th

文件：205 Kbytes 頁數(shù)：3 Pages

SMCDIODE

桑德斯微電子

SCHOTTKY RECTIFIER

? 150 °C TJ operation ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ? Trench MOS Schottky technology ? Th

文件：205 Kbytes 頁數(shù)：3 Pages

SMCDIODE

桑德斯微電子

V-Band Faraday Isolator, 90? Twist Input

Description: Model STF-15-91 is a full band Faraday isolator that operates from 50 to 75 GHz. The Faraday isolator is constructed with a longitudinal, magnetized ferrite rod that causes a Faraday rotation of the incoming RF signal. The Faraday isolator offers 28 dB typical isolation and 1.5 dB no

文件：293.27 Kbytes 頁數(shù)：3 Pages

ERAVANT

V-Band Full Waveguide Band Compact Faraday Isolator, 90° Twist

Description: Model STF-15-91-C is a full band Faraday isolator that operates from 50 to 75 GHz. The Faraday isolator is constructed with a longitudinal, magnetized ferrite rod that causes a Faraday rotation of the incoming RF signal. The compact, robust package is ideal for system integration and

文件：303.52 Kbytes 頁數(shù)：3 Pages

ERAVANT

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.375Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：284.26 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 950V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：323.08 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh? Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

文件：607.96 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V - 0.27 廓 - 14 A - FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247

Description The FDmesh? II series belongs to the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body d

文件：600.45 Kbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 650V - 0.25廓 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh? Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

文件：499.91 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Three PhaseNeutral Filters For Solar Technology Applications

Three Phase + Neutral Filters Single stage Solar technoloty applications Compact model for saving space Low leakage current

文件：182.31 Kbytes 頁數(shù)：2 Pages

PREMO

普萊默