絲?。?a target="_blank" title="Marking" href="/80n340k6/marking.html">80N340K6；Package：DPAK；N-channel 800 V, 285 mΩ typ., 12 A MDmesh K6 Power MOSFET in a DPAK package

Features ? Worldwide best RDS(on) x area ? Worldwide best FOM (figure of merit) ? Ultra low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Flyback converter ? Adapters for tablets, notebook and AIO ? LED lighting Description This very high voltage N-channel Powe

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STMICROELECTRONICS

意法半導(dǎo)體

N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET in a DPAK package

This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and ? Worldwide best RDS(on) x area \n? Worldwide best FOM (figure of merit) \n? Ultra low gate charge \n? 100% avalanche tested \n? Zener-protected;

ST

意法半導(dǎo)體

N-channel 800 V, 285 mΩ typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package

Features ? Worldwide best RDS(on) x area ? Worldwide best FOM (figure of merit) ? Ultra low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Flyback converter ? Adapters for tablets, notebook and AIO ? LED lighting Description This very high voltage N-channel Power MO

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STMICROELECTRONICS

意法半導(dǎo)體

TO252

ST

上傳：深圳市金芯陽(yáng)科技有限公司

NDK

金屬工業(yè)

上傳：天津市博通航睿技術(shù)有限公司