N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.25 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPEARTING TEMPERATURE ■ APPLICATION

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STMICROELECTRONICS

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N-Channel 100 V (D-S) MOSFET

文件：1.01048 Mbytes 頁數(shù)：7 Pages

VBSEMI

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N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

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Rad-Hard N-channel 100 V, 6 A Power MOSFET

文件：501.26 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The 8N10 SOT-89 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) @10V (typ) ID 100V 123mΩ 8A ● High density cell design for ultra low Rdson ● Fully cha

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TUOFENG

拓鋒半導體

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The 8N10G SOT-89 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) @10V (typ) ID 100V 120mΩ 8A ● High density cell design for ultra low Rdson ● Fully ch

文件：3.35002 Mbytes 頁數(shù)：6 Pages

TUOFENG

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