N溝道800 V、0.8 Ohm典型值、6 A MDmesh K5功率MOSFET，DPAK封裝

這款N-溝道穩(wěn)壓保護(hù)功率MOSFET采用ST革命性的耐雪崩、超高壓SuperMESH? 5技術(shù)進(jìn)行設(shè)計。該技術(shù)以創(chuàng)新專有的垂直工藝為基礎(chǔ)。因此，在要求高功率密度和高效率的應(yīng)用中，導(dǎo)通電阻顯著降低，并具有極低的柵極電荷。 ? 全球出色的品質(zhì)因數(shù)（FoM） \n? 極低的柵極電荷 \n? 經(jīng)過100％雪崩測試 \n? 穩(wěn)壓保護(hù);

ST

意法半導(dǎo)體

Worldwide best FOM

文件：1.3077 Mbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

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N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220FP

Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH? 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for a

文件：1.11883 Mbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) -RDS(on) = 0.95Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.59 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220FP

Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH? 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for a

文件：1.11883 Mbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體