N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=8A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 600mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · PFC Circuits · AC and DC Motor Drives

文件：286.12 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-channel 600 V, 550 m(ohm) typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package

文件：823.9 Kbytes 頁(yè)數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N溝道600 V、550 mOhm典型值、8 A MDmesh DM2功率MOSFET，DPAK封裝

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shif ? Fast-recovery body diode \n? Extremely low gate charge and input capacitance \n? Low on-resistance \n? 100% avalanche tested \n? Extremely high dv/dt ruggedness \n? Zener-protected;

ST

意法半導(dǎo)體

N-channel 600 V, 550 mΩ typ., 8 A MDmeshTM DM2 Power MOSFET in a TO-220FP package

Features ? Fast-recovery body diode ? Extremely low gate charge and input capacitance ? Low on-resistance ? 100 avalanche tested ? Extremely high dv/dt ruggedness ? Zener-protected Description This high voltage N-channel Power MOSFET is part of the MDmesh? DM2 fast recovery diode seri

文件：714.55 Kbytes 頁(yè)數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體