| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
STD90 | Thyristor-Diode Modules, Diode-Thyristor Modules 文件：1.93266 Mbytes 頁(yè)數(shù)：4 Pages | SIRECT 矽萊克半導(dǎo)體 | SIRECT | |
STD90 | Thyristor-Diode Modules, Diode-Thyristor Modules 文件：496.71 Kbytes 頁(yè)數(shù)：4 Pages | SIRECTIFIER 矽萊克電子 | SIRECTIFIER | |
High voltage NPN Darlington transistor for ignition coil Description The device is a high voltage NPN transistor in monolithic special Darlington configuration designed for applications such as electronic ignition for small engines (scooters, lawnmowers, chainsaws). Features ■ High voltage special Darlington structure ■ Very rugged bipolar technolog 文件：355.29 Kbytes 頁(yè)數(shù)：12 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 24V - 0.0052ohm - 60A - DPAK - IPAK STripFET TM III Power MOSFET Description This series of products utilizes the latest advanced design rules of ST’s proprietary STripFET? technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. FEATURES ■ RDS(ON) * Qg industry’s benchmark ■ Conducti 文件：805.7 Kbytes 頁(yè)數(shù)：17 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 24V - 0.0052ohm - 60A - DPAK - IPAK STripFET TM III Power MOSFET Description This series of products utilizes the latest advanced design rules of ST’s proprietary STripFET? technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. FEATURES ■ RDS(ON) * Qg industry’s benchmark ■ Conducti 文件：805.7 Kbytes 頁(yè)數(shù)：17 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 30V - 0.005廓 - 80A - DPAK/IPAK STripFET??III Power MOSFET Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET? technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(on)*Qg industry’s benchmark ■ Conduction losses reduce 文件：314.24 Kbytes 頁(yè)數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 30V - 0.005廓 - 80A - DPAK/IPAK STripFET??III Power MOSFET Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET? technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(on)*Qg industry’s benchmark ■ Conduction losses reduce 文件：314.24 Kbytes 頁(yè)數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：299.48 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N-channel 40V - 5.4m廓 - 80A - DPAK - TO-220 - IPAK STripFET??Power MOSFET Description This STripFET? III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performances. Features ■ Standard threshold drive ■ 100 avalanche tested Application ■ Switching applicati 文件：343.12 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 24V - 0.0052 ohm - 60A DPAK/IPAK STripFET??III POWER MOSFET Description The device utilizes the latest advanced design rules of ST’s proprietary STripFET? technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduc 文件：510.86 Kbytes 頁(yè)數(shù)：12 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
技術(shù)參數(shù)
- Marketing Status：
Active
- Grade：
Industrial
- Transistor Polarity：
NPN
- Collector-Emitter Voltage_max(V)：
350
- Collector-Base Voltage_max(V)：
500
- Collector Current_abs_max(A)：
4
- Dc Current Gain_min：
1800
- Dc Current Gain_max：
3800
- Test Condition for hFE (IC)：
2
- Test Condition for hFE (VCE)_spec(V)：
2
- VCE(sat)_max(V)：
2
- Test Condition for VCE(sat) - IC：
2
- Test Condition for VCE(sat) - IB_spec(mA)：
20
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
2016+ |
SOT-252 |
3500 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
STMicroelectronics |
24+ |
TO252 |
5000 |
本站現(xiàn)庫(kù)存 |
詢價(jià) | ||
ST |
05+ |
原廠原裝 |
3051 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
恩XP |
23+ |
BGA |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
ST |
17+ |
TO-252 |
6200 |
詢價(jià) | |||
ST |
24+ |
原廠原封 |
6523 |
進(jìn)口原裝公司百分百現(xiàn)貨可出樣品 |
詢價(jià) | ||
ST |
24+ |
SOP8 |
363 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
ST |
12+ |
TO-251 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
VBsemi |
24+ |
TO-252 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
STMicroelectronics |
2002 |
TO252 |
1435 |
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢 |
詢價(jià) |
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