絲印：80N6F6；Package：DPAK；Automotive-grade N-channel 60 V, 4.4 m??typ., 80 A STripFET??VI DeepGATE??Power MOSFET in a DPAK package

文件：676.88 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 60 V (D-S) 175 ?C MOSFET

文件：998.79 Kbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel MOSFET uses advanced SGT technology

文件：1.08523 Mbytes 頁數(shù)：4 Pages

DOINGTER

杜因特

汽車級N溝道60 V、4.4 mOhm典型值、80 A STripFET(TM) VI DeepGATE(TM) 功率MOSFET，DPAK封裝

This device is an N-channel Power MOSFET developed using the STripFET? F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. ? AEC-Q101 qualified \n? Very low on-resistance \n? Very low gate charge \n? High avalanche ruggedness \n? Low gate drive power loss;

ST

意法半導(dǎo)體

N-Channel Enhancement Mode MOSFET

Application ? Adaptor ? Charger ? Power management o SMPS Standby Power

文件：2.03279 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子