RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode a

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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：374.07 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：374.07 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

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2W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is i ? Excellent thermal stability\n? Common source configuration? POUT = 2 W with 15dB gain @ 960 MHz / 28 V\n? New RF plastic package;

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Package：PowerSO-10 裸露底部焊盤；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 960MHZ PWRSO10

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