HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

文件：288.66 Kbytes 頁數(shù)：5 Pages

ETCList of Unclassifed Manufacturers

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RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：181.89 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

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RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

文件：402.81 Kbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

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35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor

Features ? Common source configuration ? POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V ? New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial

文件：332.66 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導體

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

文件：402.81 Kbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

意法半導體

35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit ? Excellent thermal stability \n? Common source configuration \n? POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V \n? New RF plastic package;

ST

意法半導體

Package：PowerSO-10 裸露底部焊盤；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 40V 500MHZ PWRSO10

STMICROELECTRONICS

意法半導體

Package：PowerSO-10 裸露底部焊盤；包裝：托盤 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 40V 500MHZ PWRSO-10

STMICROELECTRONICS

意法半導體