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          首頁 >PD55035>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PD55035

          RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

          Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

          文件:402.81 Kbytes 頁數(shù):22 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD55035

          RF POWER TRANSISTORS The LdmoST Plastic FAMILY

          文件:181.89 Kbytes 頁數(shù):14 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD55035-E

          RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

          Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

          文件:402.81 Kbytes 頁數(shù):22 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD55035S

          HF to 2000 MHz Class AB Common Source - PowerSO-10RF

          HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

          文件:288.66 Kbytes 頁數(shù):5 Pages

          ETCList of Unclassifed Manufacturers

          未分類制造商

          PD55035S-E

          RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

          Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

          文件:402.81 Kbytes 頁數(shù):22 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD55035STR1-E

          35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor

          Features ? Common source configuration ? POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V ? New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial

          文件:332.66 Kbytes 頁數(shù):18 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD55035STR-E

          RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

          Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

          文件:402.81 Kbytes 頁數(shù):22 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD55035TR-E

          RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

          Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

          文件:402.81 Kbytes 頁數(shù):22 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD55035S

          RF POWER TRANSISTORS The LdmoST Plastic FAMILY

          文件:181.89 Kbytes 頁數(shù):14 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD55035-E

          35W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package

          The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit ? Excellent thermal stability\n? Common source configuration? POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V\n? New RF plastic package;

          ST

          意法半導(dǎo)體

          詳細參數(shù)

          • 型號:

            PD55035

          • 功能描述:

            射頻MOSFET電源晶體管 N-Ch 40 Volt 7.0 Amp

          • RoHS:

          • 制造商:

            Freescale Semiconductor

          • 配置:

            Single

          • 頻率:

            1800 MHz to 2000 MHz

          • 增益:

            27 dB

          • 輸出功率:

            100 W

          • 封裝/箱體:

            NI-780-4

          • 封裝:

            Tray

          供應(yīng)商型號品牌批號封裝庫存備注價格
          ST
          24+
          344
          詢價
          ST
          24+
          SOP
          6980
          原裝現(xiàn)貨,可開13%稅票
          詢價
          ST
          1728+
          ?
          7500
          只做原裝進口,假一罰十
          詢價
          ST
          23+
          原廠封裝
          13528
          振宏微原裝正品,假一罰百
          詢價
          25+23+
          原廠原包
          23195
          絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
          詢價
          ST/意法
          24+
          65230
          詢價
          ST
          23+
          TO-59
          8510
          原裝正品代理渠道價格優(yōu)勢
          詢價
          ST
          2447
          SOP
          100500
          一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          詢價
          STM
          25+
          SOP-10
          326
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          ST(意法)
          23+
          NA
          20094
          正納10年以上分銷經(jīng)驗原裝進口正品做服務(wù)做口碑有支持
          詢價
          更多PD55035供應(yīng)商 更新時間2026-1-19 15:30:00
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