35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit ? Excellent thermal stability \n? Common source configuration \n? POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V \n? New RF plastic package;

ST

意法半導(dǎo)體

Package：PowerSO-10RF 裸露底部焊盤（2 條成形引線）；包裝：帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 40V 500MHZ PWRSO-10

STMICROELECTRONICS

意法半導(dǎo)體

Package：PowerSO-10 裸露底部焊盤；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 40V 500MHZ PWRSO10

STMICROELECTRONICS

意法半導(dǎo)體

Package：PowerSO-10 裸露底部焊盤；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 40V 500MHZ PWRSO-10

STMICROELECTRONICS

意法半導(dǎo)體