RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

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Package：PowerSO-10RF 裸露底部焊盤（2 條成形引線）；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 945MHZ POWERSO-10RF

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RF POWER TRANSISTORS The LdmoSTFAMILY

DESCRIPTION The SD57045 is a common source N-Channel Enhancement-Modelateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045 is designed for high gain and broadband performance operating in common source mode

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HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

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RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 13 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10RF-STAP package Description The STAP57045 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed fo

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