| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印:NCE60P82AF;Package:TO-220F-3L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P82AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. Application ● Load switch General Features ● VDS =-60V,ID =-41A RDS(ON) 文件:670.2 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60p82ak/marking.html">NCE60P82AK;Package:TO-252-2L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P82AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-82A RDS(ON) 文件:385.79 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE60PD05S;Package:SOP-8;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60PD05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-5A RDS(ON) 文件:365 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60td120ut/marking.html">NCE60TD120UT;Package:TO-247;1200V, 60A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology Offering ? Very low VCE(sat 文件:362.01 Kbytes 頁數(shù):6 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60td60bp/marking.html">NCE60TD60BP;Package:TO-3P;600V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat) 文件:1.66376 Mbytes 頁數(shù):10 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60td60bt/marking.html">NCE60TD60BT;Package:TO-247;600V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat) 文件:1.84328 Mbytes 頁數(shù):13 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60td65bp/marking.html">NCE60TD65BP;Package:TO-3P;650V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat) 文件:1.5311 Mbytes 頁數(shù):1 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60td65bt/marking.html">NCE60TD65BT;Package:TO-247-3L;650V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat) 文件:1.70103 Mbytes 頁數(shù):12 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60td65bt4/marking.html">NCE60TD65BT4;Package:TO-247-4L;650V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat) 文件:1.58159 Mbytes 頁數(shù):10 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce6525q/marking.html">NCE6525Q;Package:DFN3.3X3.3-8L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6525Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =65V,ID =25A RDS(ON) 文件:309.72 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Package:
SOT-23
- ESD Diode:
No
- VDS(max):
60V
- ID(max):
3A
- PD(max):
1.7W
- VTH(typ):
1.3V
- VGS(max):
20V
- RDS(on)(typ)(@10V):
78mΩ
- RDS(on)(typ)(@4.5V):
95mΩ
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NCE/新潔能 |
ROHS/new original |
TO-252 |
10500 |
原裝元器件供應(yīng)現(xiàn)貨支持。咨詢更多現(xiàn)貨庫存,支持樣 |
詢價(jià) | ||
無錫新潔能 |
2447 |
TO-3P |
315000 |
一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
NCE |
2017+ |
TO-252 |
10000 |
百分百原裝正品現(xiàn)貨/含16%增值稅 |
詢價(jià) | ||
NCE/新潔能 |
24+ |
TO-220 |
100000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
NCE |
23+ |
TO-263 |
1600 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
NCE POWER |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價(jià) | ||
新潔能 |
SOT23-3L |
21+ |
10000 |
全新原裝現(xiàn)貨QQ3100163861電話16601719780 張小姐 |
詢價(jià) | ||
NCE/新潔能 |
22+ |
S0T-23 |
30000 |
原裝正品 |
詢價(jià) | ||
NCE |
18+ |
TO-252 |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) | ||
NCE新潔能 |
21+ |
TO-247 |
25000 |
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價(jià)格(誠信經(jīng)營 |
詢價(jià) |
相關(guān)規(guī)格書
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- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
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相關(guān)庫存
更多- NE5532
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- NE5533
- SI7970DP
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- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308BFG
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- SN65LVDT3486AD
- PS9307L2
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