NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1004MB is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: ? Class B and C Operation ? Common Base ? PG = 10 dB at 4.0 W/1090 MHz ? Omnigold? Metalization System

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ASI

Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960-1215MHz

Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ? Guaranteed performance @ 1090 MHz, 35 Vdc Output power = 4.0 W Peak Minimum gain = 10 dB ? 100 Tested for load mismatch at all phase angles with 10:1 VSWR ?

文件：170.24 Kbytes 頁數(shù)：5 Pages

MA-COM

MICROWAVE POWER TRANSISTORS NPN SILICON

Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ? Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak Minimum Gain = 10 dB ? 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSW

文件：101.55 Kbytes 頁數(shù)：5 Pages

MACOM

Microwave Pulse Power Silicon NPN Transistor

文件：170.24 Kbytes 頁數(shù)：5 Pages

MA-COM

Microwave Pulse Power Silicon NPN Transistor

文件：170.24 Kbytes 頁數(shù)：5 Pages

MA-COM

Microwave Pulse Power Silicon NPN Transistor

文件：576.53 Kbytes 頁數(shù)：6 Pages

MA-COM

Bipolar Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960–1215MHz

Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ·Guaranteed Performance @ 1090 MHz, 35 Vdc\n·Output Power = 4.0 W Peak\n·Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration\n·Nitride Passivated\n·Industry Standard Package\n·100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR\n·Minimum Gain = 10 dB\n;

MACOM

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

Package：332A-03；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 射頻 描述：TRANS NPN 4W 960MHZ-1215MHZ

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