N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ? Electrical Performance

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MOTOROLA

摩托羅拉

The RF MOSFET Line 200/150W, 500MHz, 50V

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MA-COM

The RF MOSFET Line 200/150W, 500MHz, 50V

文件：397.9 Kbytes 頁數(shù)：12 Pages

MA-COM

The RF MOSFET Line

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MA-COM

The RF MOSFET Line 200/150W, 500MHz, 50V

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MA-COM

The RF MOSFET Line 200/150W, 500MHz, 50V

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ·N-Channel Enhancement Mode Device\n·Electrical Performance: MRF176GU @ 50 V, 400 MHz (“U” Suffix); Output power — 150 W, Power Gain — 14 dB (Typ.), Efficiency — 50% (Typ.)\n·MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (typ. Efficiency — 55% typ.\n·MRF176G;

MACOM

Package：375-04；包裝：托盤 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 2CH 125V 225MHZ 375-04

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