| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-CHANNEL MOS BROADBAND RF POWER FET The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. ? Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60 (Typical) ? 文件：196.48 Kbytes 頁數(shù)：10 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
N-CHANNEL MOS BROADBAND RF POWER FET The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. ? Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60 (Typical) ? 文件：213.38 Kbytes 頁數(shù)：9 Pages | MACOM | MACOM | ||
RF Power LDMOS Transistors RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation. Features ? 文件：505.8 Kbytes 頁數(shù)：19 Pages | 恩XP | 恩XP | ||
RF Power LDMOS Transistors RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation. Features ? 文件：505.8 Kbytes 頁數(shù)：19 Pages | 恩XP | 恩XP | ||
VHP POWER MOSFET DESCRIPTION: MRF138 is a N-Channel enhancement mode MOSFET, intended for use in 28V applications up to 175 MHz. FEATURES: ? PG = 17 dB Typ. at 30 W /30MHz ? 30:1 Load VSWR Capability ? Omnigold? Metalization System 文件：84.34 Kbytes 頁數(shù)：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體公司 | NJSEMI | ||
N-Channel Enhancement Mode VHF POWER MOSFET DESCRIPTION: The ASI MRF138 is a N-Channel enhancement mode MOSFET, intended for use in 28V applications up to 175 MHz. FEATURES: ? PG = 17 dB Typ. at 30 W /30MHz ? 30:1 Load VSWR Capability ? Omnigold? Metalization System 文件：18.72 Kbytes 頁數(shù)：1 Pages | ASI | ASI | ||
The RF MOSFET Line 150W, to 150MHz, 28V Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode ? Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40 (Typ.) ? Superior high order IMD ? IMD(d3) (150 W PEP): 文件：331.02 Kbytes 頁數(shù)：10 Pages | MA-COM | MA-COM | ||
N-CHANNEL MOS LINEAR RF POWER FET The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. ? Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40 (Typ 文件：204.27 Kbytes 頁數(shù)：8 Pages | MACOM | MACOM | ||
N-CHANNEL MOS LINEAR RF POWER FET The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. ? Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40 (Typ 文件：163.87 Kbytes 頁數(shù)：6 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
N-CHANNEL BROADBAND RF POWER MOSFET The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas 文件：160.63 Kbytes 頁數(shù)：8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
甚高頻 （VHF）_TR
- 封裝形式：
直插封裝
- 極限工作電壓：
36V
- 最大電流允許值：
0.4A
- 最大工作頻率：
220MHZ
- 引腳數(shù)：
3
- 可代換的型號：
BFR36,BLW11,3DA21A,
- 最大耗散功率：
1W
- 放大倍數(shù)：
- 圖片代號：
C-40
- vtest：
36
- htest：
220000000
- atest：
0.4
- wtest：
1
產(chǎn)品屬性
- 產(chǎn)品編號：
MRF
- 制造商：
L3 Narda-MITEQ
- 類別：
RF/IF，射頻/中頻和 RFID > RF 其它 IC 和模塊
- 包裝：
盒
- 描述：
L3 PRODUCT
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MPN |
2022+ |
3000 |
全新原裝 貨期兩周 |
詢價 | |||
MOTOROLA/摩托羅拉 |
25+ |
SSOP16 |
950 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
FREESCALE |
17+ |
SMD |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
24+ |
CAN |
500 |
詢價 | ||||
MICROCHIP/美國微芯 |
21+ |
QFN-40(6x6) |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
恩XP |
22+ |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | |||
MA/COM |
23+ |
高頻管 |
1000 |
原裝正品,假一罰十 |
詢價 | ||
恩XP |
2022+ |
5000 |
只做原裝,價格優(yōu)惠,長期供貨。 |
詢價 | |||
MOTOROLA |
22+ |
control |
3000 |
原裝正品,支持實單 |
詢價 | ||
MICROCHIP/微芯 |
25+ |
QFN40 |
51637 |
全新原裝正品支持含稅 |
詢價 |
相關(guān)規(guī)格書
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
- TL074B
- TL074M
- SN65LVDT3486B
- PS9351L
- PS9317L2
- PS9313L2
- PS9309L2
- PS9308L2
- PS9306L2
- PS9305L
相關(guān)庫存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
- TL074A
- TL074-EP
- TL074H
- SN65LVDT3486AD
- PS9307L2
- PS9332L
- PS9313L
- PS9307AL
- PS9351L2
- PS9331L
- PS9303L
