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          首頁 >MRF>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MRF1035MB

          MICROWAVE POWER TRANSISTORS

          The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB ? 100 Tested for Loa

          文件:100.91 Kbytes 頁數(shù):4 Pages

          MOTOROLA

          摩托羅拉

          MRF1035MB

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI MRF1035MB is Designed for Class C, DME/TACAN Applications up to 1090 MHz. FEATURES: ? Internal Input Matching Network ? PG = 10 dB at 35 W/1090 MHz ? Omnigold? Metalization System

          文件:17.7 Kbytes 頁數(shù):1 Pages

          ASI

          MRF10500

          MICROWAVE POWER TRANSISTORS

          The RF Line Microwave Pulse Power Transistors . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. ? Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) ? 100 Tested for Load M

          文件:104.12 Kbytes 頁數(shù):4 Pages

          MOTOROLA

          摩托羅拉

          MRF10501

          MICROWAVE POWER TRANSISTORS

          The RF Line Microwave Pulse Power Transistors . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. ? Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) ? 100 Tested for Load M

          文件:104.12 Kbytes 頁數(shù):4 Pages

          MOTOROLA

          摩托羅拉

          MRF10502

          Microwave Pulse Power Silicon NPN Transistor 500W (peak), 1025-1150MHz

          Microwave Pulse Power Silicon NPN Transistor 500W (peak), 1025–1150MHz Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. ? Guaranteed performance @ 1090 MHz Output power = 500 W peak Gain = 8.5 dB min, 9.0 dB (typ.) ? 100 t

          文件:188.36 Kbytes 頁數(shù):6 Pages

          MA-COM

          MRF10502

          MICROWAVE POWER TRANSISTOR NPN SILICON

          The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, T ACAN and Mode–S transmitters. ? Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) ? 100 Tested for Load Mismatc

          文件:142.34 Kbytes 頁數(shù):4 Pages

          MACOM

          MRF10502

          Designed for 1025-1150 MHz pulse common base amplifier

          Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, T ACAN and Mode–S transmitters. ? Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) ? 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSWR ? Hermeti

          文件:76.36 Kbytes 頁數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          MRF1090MA

          Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960-1215MHz

          Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed performance @ 1090 MHz, 50 Vdc Output power = 90 W peak Minimum gain = 8.4 dB ? 100 tested for load mismatch at all phase angles with 10:1 VSWR ? Industry standard

          文件:184.55 Kbytes 頁數(shù):5 Pages

          MA-COM

          MRF1090MA

          MICROWAVE POWER TRANSISTORS

          The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB ? 100 Tested for Load Mismatch a

          文件:104.63 Kbytes 頁數(shù):6 Pages

          MOTOROLA

          摩托羅拉

          MRF1090MA

          MICROWAVE POWER TRANSISTOR NPN SILICON

          The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB ? 100 Tested for Load Mismatch at

          文件:127.63 Kbytes 頁數(shù):4 Pages

          MACOM

          晶體管資料

          • 型號:

            MRF207

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            甚高頻 (VHF)_TR

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            36V

          • 最大電流允許值:

            0.4A

          • 最大工作頻率:

            220MHZ

          • 引腳數(shù):

            3

          • 可代換的型號:

            BFR36,BLW11,3DA21A,

          • 最大耗散功率:

            1W

          • 放大倍數(shù):

          • 圖片代號:

            C-40

          • vtest:

            36

          • htest:

            220000000

          • atest:

            0.4

          • wtest:

            1

          產(chǎn)品屬性

          • 產(chǎn)品編號:

            MRF

          • 制造商:

            L3 Narda-MITEQ

          • 類別:

            RF/IF,射頻/中頻和 RFID > RF 其它 IC 和模塊

          • 包裝:

          • 描述:

            L3 PRODUCT

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
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          更多MRF供應(yīng)商 更新時(shí)間2022-12-6 9:27:00
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