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          首頁 >MRF>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MRF148A

          N-Channel Enhancement Mode VHF POWER MOSFET

          DESCRIPTION: The ASI MRF148A is Designed for General Purpose Class B Power Amplifier Applications up to 175 MHz. FEATURES: ? PG = 15 dB Typ. at 30 W /175 MHz ? ηD = 50 Typ. at 30 W /30 MHz ? Omnigold? Metalization System

          文件:42.93 Kbytes 頁數(shù):1 Pages

          ASI

          MRF148A

          Linear RF Power FET 30W, to 175MHz, 50V

          Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. ? Superior high order IMD IMD(d3) (30W PEP): –35 dB (Typ.) IMD(d11) (30W PEP): –60 dB (Typ.) ? Specified 50V, 30MHz characteristics: Output power: 30W Gain: 18dB (Typ.)

          文件:285.74 Kbytes 頁數(shù):7 Pages

          MA-COM

          MRF148A

          Designed for power amplifier applications in industrial

          Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. ? Superior high order IMD IMD(d3) (SOW PEP): -35 dB (Typ.) IMD(d11) (30W PEP): -60 dB (Typ.) ? Specified 50V, 30MHz characteristics: Output power: SOW Gain: 18dB (Typ.)

          文件:84.36 Kbytes 頁數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導體新澤西半導體公司

          MRF150

          RF Power FET 150W, to 150MHz, 50V

          Designed primarily for linear large-signal output stages up to 150 MHz ? Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.) ? Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45 (

          文件:285.58 Kbytes 頁數(shù):9 Pages

          MA-COM

          MRF150

          SILICON RF POWER MOSFET

          DESCRIPTION: The MRF150is an N-Channel Enhancement-Mode MOS Broadband RF Ppwer Transistor Designed for Wideband Large Signal Amplifier Applications From 2.0 to 150 MHz.

          文件:19.91 Kbytes 頁數(shù):1 Pages

          ASI

          MRF150

          N-CHANNEL MOS LINEAR RF POWER FET

          The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. ? Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ)

          文件:148.54 Kbytes 頁數(shù):6 Pages

          MOTOROLA

          摩托羅拉

          MRF150

          N-CHANNEL MOS LINEAR RF POWER FET

          The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. ? Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (

          文件:183.53 Kbytes 頁數(shù):8 Pages

          MACOM

          MRF1500

          MICROWAVE POWER TRANSISTOR

          The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as DME. ? Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 dB Min ? 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSWR ? Herme

          文件:103.24 Kbytes 頁數(shù):4 Pages

          MOTOROLA

          摩托羅拉

          MRF15060

          RF POWER BIPOLAR TRANSISTORS

          The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitter class A and class AB am

          文件:164.33 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MRF15060S

          RF POWER BIPOLAR TRANSISTORS

          The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitter class A and class AB am

          文件:164.33 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          晶體管資料

          • 型號:

            MRF207

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產廠家:

          • 制作材料:

            Si-NPN

          • 性質:

            甚高頻 (VHF)_TR

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            36V

          • 最大電流允許值:

            0.4A

          • 最大工作頻率:

            220MHZ

          • 引腳數(shù):

            3

          • 可代換的型號:

            BFR36,BLW11,3DA21A,

          • 最大耗散功率:

            1W

          • 放大倍數(shù):

          • 圖片代號:

            C-40

          • vtest:

            36

          • htest:

            220000000

          • atest:

            0.4

          • wtest:

            1

          產品屬性

          • 產品編號:

            MRF

          • 制造商:

            L3 Narda-MITEQ

          • 類別:

            RF/IF,射頻/中頻和 RFID > RF 其它 IC 和模塊

          • 包裝:

          • 描述:

            L3 PRODUCT

          供應商型號品牌批號封裝庫存備注價格
          FREESCALE
          17+
          SMD
          6200
          100%原裝正品現(xiàn)貨
          詢價
          MOTOROLA/摩托羅拉
          25+
          SSOP16
          950
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          24+
          CAN
          500
          詢價
          恩XP
          22+
          9000
          原廠渠道,現(xiàn)貨配單
          詢價
          MPN
          2022+
          3000
          全新原裝 貨期兩周
          詢價
          MA/COM
          23+
          高頻管
          1000
          原裝正品,假一罰十
          詢價
          恩XP
          2022+
          5000
          只做原裝,價格優(yōu)惠,長期供貨。
          詢價
          MOTOROLA
          22+
          control
          3000
          原裝正品,支持實單
          詢價
          MICROCHIP/美國微芯
          21+
          QFN-40(6x6)
          10000
          全新原裝現(xiàn)貨
          詢價
          ON/安森美
          21+
          TSSOP16
          30000
          百域芯優(yōu)勢 實單必成 可開13點增值稅發(fā)票
          詢價
          更多MRF供應商 更新時間2026-1-19 14:02:00
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