RF POWER FIELD-EFFECT TRANSISTOR

DESCRIPTION: The ASI MRF137 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Output and Driver Stage Applications up to 400 MHz.

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ASI

The RF MOSFET Line 30W, to 400MHz, 28V

Designed for wideband large signal output and drive stages up to 400 MHz range. N–Channel enhancement mode ? Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency — 60 (Typical) ? Small– and large–signal characterization ? Typical performance a

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MA-COM

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. ? Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60 (Typical) ?

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MOTOROLA

摩托羅拉

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. ? Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60 (Typical) ?

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MACOM

The RF MOSFET Line 30W, to 400MHz, 28V

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MA-COM

The RF MOSFET Line 30W, to 400MHz, 28V

Designed for wideband large signal output and drive stages up to 400 MHz range. ·Guaranteed 28 V, 150 MHzPerformance - Output power = 30 W Minimum Gain = 13 dB Efficiency — 60% (Typ.)\n·100% Test for Load Mistmatch at all Phase Angelswith 30:1 VSWR\n·Typical Performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain\n·Small andLarge Signal Characterization\n·Excellent Th;

MACOM

Package：211-07；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 400MHZ 211-07

MACOM Technology Solutions

RF Power LDMOS Transistors

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation. Features ?

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恩XP

RF Power LDMOS Transistors

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation. Features ?

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恩XP

The RF MOSFET Line

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MA-COM