| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1090MB is Designed for High Peak power & low duty cycle, IFF, DME, and TACAN Applications. FEATURES: ? Internal Input Matching Network ? PG = 8.4 dB at 90 W/1150 MHz ? Omnigold? Metalization System 文件：17.75 Kbytes 頁數(shù)：1 Pages | ASI | ASI | ||
Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960-1215MHz Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960–1215MHz Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed performance @ 1090 MHz, 50 Vdc Output power = 90 W Peak Minimum gain = 8.4 dB ? 100 tested f 文件：185.79 Kbytes 頁數(shù)：5 Pages | MA-COM | MA-COM | ||
MICROWAVE POWER TRANSISTORS The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB ? 100 Tested for Load Mismatch a 文件：104.63 Kbytes 頁數(shù)：6 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
MICROWAVE POWER TRANSISTOR NPN SILICON The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB ? 100 Tested for Load Mismatch a 文件：120.99 Kbytes 頁數(shù)：4 Pages | MACOM | MACOM | ||
MICROWAVE POWER TRANSISTOR NPN SILICON The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB ? 100 Tested for Load Mismatch at 文件：127.63 Kbytes 頁數(shù)：4 Pages | MACOM | MACOM | ||
MICROWAVE POWER TRANSISTORS The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB ? 100 Tested for Load Mismatch a 文件：104.63 Kbytes 頁數(shù)：6 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
MICROWAVE POWER TRANSISTOR NPN SILICON The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB ? 100 Tested for Load Mismatch a 文件：120.99 Kbytes 頁數(shù)：4 Pages | MACOM | MACOM | ||
MICROWAVE POWER TRANSISTOR NPN SILICON The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB ? 100 Tested for Load Mismatch at 文件：150.92 Kbytes 頁數(shù)：4 Pages | MACOM | MACOM | ||
MICROWAVE POWER TRANSISTORS The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB ? 100 Tested for Load Mismatch 文件：128.199 Kbytes 頁數(shù)：5 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960-1215MHz Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960–1215MHz Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ? Guaranteed performance @ 1090 MHz, 50 Vdc Output power = 150 W peak Minimum gain = 7.8 dB ? 100 tested 文件：196.12 Kbytes 頁數(shù)：5 Pages | MA-COM | MA-COM |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
甚高頻 （VHF）_TR
- 封裝形式：
直插封裝
- 極限工作電壓：
36V
- 最大電流允許值：
0.4A
- 最大工作頻率：
220MHZ
- 引腳數(shù)：
3
- 可代換的型號：
BFR36,BLW11,3DA21A,
- 最大耗散功率：
1W
- 放大倍數(shù)：
- 圖片代號：
C-40
- vtest：
36
- htest：
220000000
- atest：
0.4
- wtest：
1
產(chǎn)品屬性
- 產(chǎn)品編號：
MRF
- 制造商：
L3 Narda-MITEQ
- 類別：
RF/IF，射頻/中頻和 RFID > RF 其它 IC 和模塊
- 包裝：
盒
- 描述：
L3 PRODUCT
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FREESCALE |
17+ |
SMD |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
24+ |
1100 |
真實現(xiàn)貨庫存 |
詢價 | ||||
Microchip |
13+ |
2073 |
原裝分銷 |
詢價 | |||
恩XP |
2022+ |
5000 |
只做原裝,價格優(yōu)惠,長期供貨。 |
詢價 | |||
MITSUBISHI/三菱 |
2005+ |
高頻管 |
182 |
原裝正品,誠信經(jīng)營。 |
詢價 | ||
MA/COM |
23+ |
高頻管 |
1000 |
原裝正品,假一罰十 |
詢價 | ||
恩XP |
25+ |
TO-220-3 |
8880 |
原裝認準芯澤盛世！ |
詢價 | ||
ON/安森美 |
21+ |
TSSOP16 |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅發(fā)票 |
詢價 | ||
MICROCHIP |
24+ |
QFN32 |
12000 |
原裝正品 假一罰十 可拆樣 |
詢價 | ||
M/A-COM |
25+ |
TO-59 |
500 |
原廠原裝,價格優(yōu)勢 |
詢價 |
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