| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRL520 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa 文件：1.02845 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRL520 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 文件：264.26 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRL520 | Power MOSFET FEATURES ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Logic-Level Gate Drive ? RDS(on) Specified at VGS = 4 V and 5 V ? 175 °C Operating Temperature ? Fast Switching ? Ease of Paralleling ? Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from 文件：1.16179 Mbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRL520 | HEXFET POWER MOSFET 文件：183.34 Kbytes 頁數(shù)：6 Pages | IRF | IRF | |
IRL520 | Power MOSFET 文件：1.16464 Mbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRL520 | Power MOSFET ? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? Logic-level gate drive; | Vishay 威世 | Vishay | |
IRL520 | HEXFET POWER MOSFET | Infineon 英飛凌 | Infineon | |
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 文件：264.26 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Advenced Power MOSFET BVDSS = 100 V RDS(on) = 0.22? ID = 9.2 A FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS = 100V ? Lower RDS(ON): 0.176? (Typ.) 文件：227.08 Kbytes 頁數(shù)：7 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS (on) specified at VGS = 4 V and 5 V ? 175°C operating temperature ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datasheet provides inform 文件：334.57 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
技術(shù)參數(shù)
- OPN：
IRL520NPBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
180 m?
- ID @25°C max：
10 A
- QG typ @4.5V：
13.3 nC
- Polarity：
N
- VGS(th) min：
1 V
- VGS(th) max：
2 V
- VGS(th)：
1.5 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO 220 |
161203 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
15+ |
TO-220 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價 | ||
IR |
24+ |
原廠封裝 |
3001 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
20+ |
TO-220 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
VISHAY |
25+ |
TO-220 |
3000 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價 | ||
IR |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
25+ |
TO-220 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Vishay Siliconix |
22+ |
TO2203 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
25+ |
200 |
公司優(yōu)勢庫存 熱賣中!! |
詢價 | |||
Vishay |
26+ |
WQFN20 |
86720 |
全新原裝正品價格最實(shí)惠 假一賠百 |
詢價 |
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