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          首頁(yè) >IRL1004>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRL1004

          HEXFET Power MOSFET

          Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

          文件:89.37 Kbytes 頁(yè)數(shù):8 Pages

          IRF

          IRL1004

          N-Channel MOSFET Transistor

          ? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤6.5m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:338.58 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          IRL1004

          40V 單個(gè) N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封裝

          Infineon

          英飛凌

          IRL1004L

          Advanced Process Technology Ultra Low On-Resistance

          Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

          文件:124.65 Kbytes 頁(yè)數(shù):10 Pages

          IRF

          IRL1004LPBF

          HEXFET Power MOSFET

          Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

          文件:206.53 Kbytes 頁(yè)數(shù):10 Pages

          IRF

          IRL1004PBF

          Advanced Process Technology

          Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

          文件:164.73 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          IRL1004S

          Advanced Process Technology Ultra Low On-Resistance

          Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

          文件:124.65 Kbytes 頁(yè)數(shù):10 Pages

          IRF

          IRL1004S

          絲印:D2PAK;Package:TO-263;isc N-Channel MOSFET Transistor

          ? FEATURES ? With TO-263( D2PAK ) packaging ? High speed switching ? Low gate input resistance ? Standard level gate drive ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Power supply ? Switching a

          文件:263.54 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          IRL1004SPBF

          HEXFET Power MOSFET

          Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

          文件:206.53 Kbytes 頁(yè)數(shù):10 Pages

          IRF

          IRL1004L

          HEXFET Power MOSFET

          文件:133.79 Kbytes 頁(yè)數(shù):10 Pages

          NSC

          國(guó)半

          技術(shù)參數(shù)

          • OPN:

            IRL1004PBF

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            40 V

          • RDS (on) @10V max:

            6.5 m?

          • RDS (on) @4.5V max:

            9 m?

          • ID @25°C max:

            130 A

          • QG typ @4.5V:

            66.7 nC

          • Polarity:

            N

          • VGS(th) min:

            1 V

          • Technology:

            IR MOSFET?

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          ir
          06+
          TO-220
          15000
          原裝
          詢價(jià)
          IR
          1415+
          TO-263
          28500
          全新原裝正品,優(yōu)勢(shì)熱賣(mài)
          詢價(jià)
          IR
          17+
          TO-220
          6200
          詢價(jià)
          IR
          24+
          原廠封裝
          2000
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          IR
          24+
          T0220
          70
          詢價(jià)
          IR
          16+
          TO-220
          10000
          全新原裝現(xiàn)貨
          詢價(jià)
          IR
          23+
          TO-220-3
          11846
          一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價(jià)
          IR
          20+
          TO-220
          38900
          原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
          詢價(jià)
          INFINE0N
          21+
          TO-220
          32568
          100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
          詢價(jià)
          IR
          24+
          65230
          詢價(jià)
          更多IRL1004供應(yīng)商 更新時(shí)間2026-1-21 16:07:00
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