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首頁(yè) >IRL10>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
IRL10	文件：183.96 Kbytes Page：7 Pages	5mm Infrared LED , T-1 3/4 Descriptions ? EVERLIGHT’s Infrared Emitting Diode (IR333C) is a high intensity diode , molded in a water clear plastic package. ? The device is spectrally matched with phototransistor , photodiode and infrared receiver module. Features ? High reliability ? High radiant intensity ? Peak wave 文件：183.96 Kbytes 頁(yè)數(shù)：7 Pages	EVERLIGHT 臺(tái)灣億光	EVERLIGHT
IRL1004	文件：89.37 Kbytes Page：8 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel 文件：89.37 Kbytes 頁(yè)數(shù)：8 Pages	IRF	IRF
IRL1004	文件：338.58 Kbytes Page：2 Pages	N-Channel MOSFET Transistor ? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤6.5m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：338.58 Kbytes 頁(yè)數(shù)：2 Pages	ISC 無(wú)錫固電	ISC
IRL1004L	文件：124.65 Kbytes Page：10 Pages	Advanced Process Technology Ultra Low On-Resistance Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know 文件：124.65 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL1004LPBF	文件：206.53 Kbytes Page：10 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know 文件：206.53 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL1004PBF	文件：164.73 Kbytes Page：9 Pages	Advanced Process Technology Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel 文件：164.73 Kbytes 頁(yè)數(shù)：9 Pages	IRF	IRF
IRL1004S	文件：263.54 Kbytes Page：2 Pages	絲印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor ? FEATURES ? With TO-263( D2PAK ) packaging ? High speed switching ? Low gate input resistance ? Standard level gate drive ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Power supply ? Switching a 文件：263.54 Kbytes 頁(yè)數(shù)：2 Pages	ISC 無(wú)錫固電	ISC
IRL1004S	文件：124.65 Kbytes Page：10 Pages	Advanced Process Technology Ultra Low On-Resistance Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know 文件：124.65 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL1004SPBF	文件：206.53 Kbytes Page：10 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know 文件：206.53 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL1004L	文件：133.79 Kbytes Page：10 Pages	HEXFET Power MOSFET 文件：133.79 Kbytes 頁(yè)數(shù)：10 Pages	NSC 國(guó)半	NSC

技術(shù)參數(shù)

OPN：
IRL1004PBF
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
40 V
RDS (on) @10V max：
6.5 m?
RDS (on) @4.5V max：
9 m?
ID @25°C max：
130 A
QG typ @4.5V：
66.7 nC
Polarity：
N
VGS(th) min：
1 V
Technology：
IR MOSFET?

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
諦輝(北京/上海/青島 )電子科技有限公司	IRL1004S	IR專(zhuān)賣(mài)	25+	QFN	18000	原廠直接發(fā)貨進(jìn)口原裝	詢(xún)價(jià)
深圳市粵科源興科技有限公司	IRL1004S	IR	13+	TO-263	8238	原裝分銷(xiāo)	詢(xún)價(jià)
芯有半導(dǎo)體（深圳）有限公司	IRL1004	ir	06+	TO-220	15000	原裝	詢(xún)價(jià)
深圳市勤思達(dá)科技有限公司	IRL1004	IR	1415+	TO-263	28500	全新原裝正品,優(yōu)勢(shì)熱賣(mài)	詢(xún)價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	IRL1004STRLPBF	IR		TO-263	2000	原裝長(zhǎng)期供貨!	詢(xún)價(jià)
深圳市卓越微芯電子有限公司	IRL1004PBF	IR	25+	TO220	18600	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢(xún)價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	IRL1004	IR	17+	TO-220	6200		詢(xún)價(jià)
深圳市凌旭科技有限公司	IRL1004PBF	IR	2016+	TO220	3029	公司只做原裝,假一罰十,可開(kāi)17%增值稅發(fā)票!	詢(xún)價(jià)
深圳市弘為電子有限公司	IRL1004	IR	24+	原廠封裝	2000	原裝現(xiàn)貨假一罰十	詢(xún)價(jià)
深圳市一線(xiàn)半導(dǎo)體有限公司	IRL1004	IR	24+	T0220	70		詢(xún)價(jià)

更多IRL10供應(yīng)商更新時(shí)間2026-1-21 17:52:00

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