| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Surface-mount (IRFR020, SiHFR020) ? Available in tape and reel ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation 文件：1.05947 Mbytes 頁(yè)數(shù)：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU 文件：1.84644 Mbytes 頁(yè)數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU 文件：4.37106 Mbytes 頁(yè)數(shù)：9 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU 文件：1.84644 Mbytes 頁(yè)數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU 文件：4.37106 Mbytes 頁(yè)數(shù)：9 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU 文件：1.84644 Mbytes 頁(yè)數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU 文件：4.37106 Mbytes 頁(yè)數(shù)：9 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.50222 Mbytes 頁(yè)數(shù)：7 Pages | KERSEMI | KERSEMI | ||
絲印：IRFR024；Package：TO252-2L；N-Channel Enhancement Mode MOSFET Description The IRFR024NT uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =30 A RDS(ON) 文件：853.58 Kbytes 頁(yè)數(shù)：5 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：1.98595 Mbytes 頁(yè)數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
技術(shù)參數(shù)
- OPN：
IRFR024NTRLPBF/IRFR024NTRPBF
- Qualification：
Non-Automotive
- Package name：
DPAK/DPAK
- VDS max：
55 V
- RDS (on) @10V max：
75 m?/75 m?
- ID @25°C max：
17 A/17 A
- QG typ @10V：
13.3 nC/13.3 nC
- Polarity：
N
- VGS(th) min：
2 V/2 V
- VGS(th) max：
4 V/4 V
- VGS(th)：
3 V/3 V
- Technology：
IR MOSFET?/IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
SOT-252 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
SOT-252 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
SOT-252 |
7000 |
詢價(jià) | |||
IR |
23+ |
NA |
2860 |
原裝正品代理渠道價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
IR |
20+ |
TO-252 |
31930 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
VishayPCS |
新 |
5 |
全新原裝 貨期兩周 |
詢價(jià) | |||
IR |
24+ |
TO252 |
3000 |
全新原裝現(xiàn)貨 優(yōu)勢(shì)庫(kù)存 |
詢價(jià) | ||
IR |
2021+ |
40000 |
只做原裝，可提供樣品 |
詢價(jià) | |||
Infineon/英飛凌 |
23+ |
DPAK |
12700 |
買原裝認(rèn)準(zhǔn)中賽美 |
詢價(jià) | ||
IR |
新年份 |
TO-252 |
69520 |
一級(jí)代理原裝正品現(xiàn)貨,支持實(shí)單! |
詢價(jià) |
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