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          首頁 >IRFR>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRFR

          Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

          文件:142.05 Kbytes 頁數(shù):10 Pages

          IRF

          IRFR

          Ultra Low On-Resistance

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

          文件:3.73884 Mbytes 頁數(shù):10 Pages

          KERSEMI

          IRFR

          Surface Mount (IRFR120N)

          文件:3.73792 Mbytes 頁數(shù):10 Pages

          KERSEMI

          IRFR/U1010Z

          Advanced Process Technology

          Description Specifically designed for Automotive applications, this MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetiti

          文件:4.28522 Mbytes 頁數(shù):11 Pages

          KERSEMI

          IRFR/U220A

          Advanced Power MOSFET

          FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 A (Max.) @ VDS= 200V ■ Low RDS(ON) : 0.626 ? (Typ.)

          文件:258.54 Kbytes 頁數(shù):7 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRFR/U2405

          Surface Mount (IRFR2405)

          Description The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Surf

          文件:1.61391 Mbytes 頁數(shù):8 Pages

          KERSEMI

          IRFR/U3303

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:1.89695 Mbytes 頁數(shù):10 Pages

          KERSEMI

          IRFR/U3303PBF

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:3.84104 Mbytes 頁數(shù):10 Pages

          KERSEMI

          IRFR/U3709Z

          High Frequency Synchronous Buck Converters for Computer Processor Power

          Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification

          文件:1.9484 Mbytes 頁數(shù):9 Pages

          KERSEMI

          IRFR010

          Power MOSFET

          DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

          文件:4.60859 Mbytes 頁數(shù):8 Pages

          KERSEMI

          技術(shù)參數(shù)

          • OPN:

            IRFR024NTRLPBF/IRFR024NTRPBF

          • Qualification:

            Non-Automotive

          • Package name:

            DPAK/DPAK

          • VDS max:

            55 V

          • RDS (on) @10V max:

            75 m?/75 m?

          • ID @25°C max:

            17 A/17 A

          • QG typ @10V:

            13.3 nC/13.3 nC

          • Polarity:

            N

          • VGS(th) min:

            2 V/2 V

          • VGS(th) max:

            4 V/4 V

          • VGS(th):

            3 V/3 V

          • Technology:

            IR MOSFET?/IR MOSFET?

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          IR
          22+
          SOT-252
          6000
          終端可免費(fèi)供樣,支持BOM配單
          詢價(jià)
          IR
          23+
          SOT-252
          8000
          專注配單,只做原裝進(jìn)口現(xiàn)貨
          詢價(jià)
          IR
          23+
          SOT-252
          7000
          詢價(jià)
          IR
          23+
          TO-252
          3200
          絕對(duì)全新原裝!優(yōu)勢供貨渠道!特價(jià)!請(qǐng)放心訂購!
          詢價(jià)
          IR
          01+
          SOT252/2.5
          5600
          全新原裝進(jìn)口自己庫存優(yōu)勢
          詢價(jià)
          Fairchi
          24+
          DXPAK
          6000
          進(jìn)口原裝正品假一賠十,貨期7-10天
          詢價(jià)
          IR
          24+
          SOT252
          1800
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          IR
          24+
          TO-252
          29
          詢價(jià)
          IR
          24+
          SOT252
          5825
          公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
          詢價(jià)
          IR
          23+
          SOT-252
          5000
          原裝正品,假一罰十
          詢價(jià)
          更多IRFR供應(yīng)商 更新時(shí)間2026-1-21 14:00:00
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