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    首頁 >IRFR>規(guī)格書列表

    型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

    IRFR1010ZTRPBF-TP

    N-Channel Enhancement Mode MOSFET

    Application ? Adaptor ? Charger ? Power management o SMPS Standby Power

    文件:2.03253 Mbytes 頁數(shù):4 Pages

    TECHPUBLIC

    臺(tái)舟電子

    IRFR1018E

    N-Channel MOSFET Transistor

    ? DESCRITION ? High Speed Power Switching ? FEATURES ? Static drain-source on-resistance: RDS(on)≤8.4m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

    文件:335.83 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    IRFR1018EPBF

    HEXFET TM Power MOSFET

    Benefits ? Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ? Fully Characterized Capacitance and Avalanche SOA ? Enhanced body diode dV/dt and dI/dt Capability Applications ? High Efficiency Synchronous Rectification in SMPS ? Uninterruptible Power Supply ? High Speed Power Switching

    文件:366.84 Kbytes 頁數(shù):10 Pages

    IRF

    IRFR1018EPBF

    High Efficiency Synchronous Rectification in SMPS

    Benefits ? Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ? Fully Characterized Capacitance and Avalanche SOA ? Enhanced body diode dV/dt and dI/dt Capability Applications ? High Efficiency Synchronous Rectification in SMPS ? Uninterruptible Power Supply ? High Speed Power Switching

    文件:374.37 Kbytes 頁數(shù):10 Pages

    IRF

    IRFR1018ETRPBF

    High Efficiency Synchronous Rectification in SMPS

    Benefits ? Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ? Fully Characterized Capacitance and Avalanche SOA ? Enhanced body diode dV/dt and dI/dt Capability Applications ? High Efficiency Synchronous Rectification in SMPS ? Uninterruptible Power Supply ? High Speed Power Switching

    文件:374.37 Kbytes 頁數(shù):10 Pages

    IRF

    IRFR1018ETRPBF-TP

    N-Channel Enhancement Mode MOSFET

    Application ? Adaptor ? Charger ? Power management o SMPS Standby Power

    文件:2.0304 Mbytes 頁數(shù):4 Pages

    TECHPUBLIC

    臺(tái)舟電子

    IRFR110

    Dynamic dV/dt Rating Repetitive Avalanche Rated

    DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

    文件:3.88858 Mbytes 頁數(shù):7 Pages

    KERSEMI

    IRFR110

    4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs

    4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced power MOSFETs are designed for use

    文件:60.03 Kbytes 頁數(shù):7 Pages

    INTERSIL

    IRFR110

    Power MOSFET

    DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power

    文件:1.37078 Mbytes 頁數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    IRFR110

    Power MOSFET

    FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Surface-mount (IRFR110, SiHFR110) ? Available in tape and reel ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

    文件:782.87 Kbytes 頁數(shù):13 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    技術(shù)參數(shù)

    • OPN:

      IRFR024NTRLPBF/IRFR024NTRPBF

    • Qualification:

      Non-Automotive

    • Package name:

      DPAK/DPAK

    • VDS max:

      55 V

    • RDS (on) @10V max:

      75 m?/75 m?

    • ID @25°C max:

      17 A/17 A

    • QG typ @10V:

      13.3 nC/13.3 nC

    • Polarity:

      N

    • VGS(th) min:

      2 V/2 V

    • VGS(th) max:

      4 V/4 V

    • VGS(th):

      3 V/3 V

    • Technology:

      IR MOSFET?/IR MOSFET?

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
    IR
    22+
    SOT-252
    6000
    終端可免費(fèi)供樣,支持BOM配單
    詢價(jià)
    IR
    23+
    SOT-252
    8000
    專注配單,只做原裝進(jìn)口現(xiàn)貨
    詢價(jià)
    IR
    23+
    SOT-252
    7000
    詢價(jià)
    VISHAY/威世
    22+
    TO-252-3(DPAK)
    100000
    代理渠道/只做原裝/可含稅
    詢價(jià)
    IR
    16+
    NA
    8800
    原裝現(xiàn)貨,貨真價(jià)優(yōu)
    詢價(jià)
    FAIRCHILD/仙童
    2026+
    TO252
    29955
    進(jìn)口原盤現(xiàn)貨/2K
    詢價(jià)
    VISHAY
    24+/25+
    D-PAK(TO-252)
    4000
    原裝正品現(xiàn)貨庫存價(jià)優(yōu)
    詢價(jià)
    IR
    24+
    SOT
    30617
    主打XILINX品牌價(jià)格絕對(duì)優(yōu)勢(shì)
    詢價(jià)
    INFINOEN
    25+
    TO-252-3
    90000
    一級(jí)代理進(jìn)口原裝現(xiàn)貨、假一罰十價(jià)格合理
    詢價(jià)
    Infineon(英飛凌)
    2021+
    -
    499
    詢價(jià)
    更多IRFR供應(yīng)商 更新時(shí)間2026-1-22 14:00:00

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