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          首頁 >IRFR>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRFR014

          N-CHANNEL POWER MOSFET

          文件:287.41 Kbytes 頁數:5 Pages

          SAMSUNG

          三星

          IRFR014

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

          文件:1.768 Mbytes 頁數:8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFR014

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

          文件:4.2849 Mbytes 頁數:7 Pages

          KERSEMI

          IRFR014_V01

          Power MOSFET

          FEATURES ? Dynamic dV/dt rating ? Surface-mount (IRFR014, SiHFR014) ? Straight lead (IRFU014, SiHFU014) ? Available in tape and reel ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99

          文件:892.51 Kbytes 頁數:13 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFR014A

          ADVANCED POWER MOSFET

          FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS = 60V ? Lower RDS(ON): 0.097? (Typ.)

          文件:218.75 Kbytes 頁數:7 Pages

          FAIRCHILD

          仙童半導體

          IRFR014PBF

          HEXFET Power MOSFET

          Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techni

          文件:2.0989 Mbytes 頁數:10 Pages

          IRF

          IRFR014PBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

          文件:4.2849 Mbytes 頁數:7 Pages

          KERSEMI

          IRFR014PBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

          文件:1.768 Mbytes 頁數:8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFR014TR

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

          文件:1.768 Mbytes 頁數:8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFR014TR

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

          文件:4.2849 Mbytes 頁數:7 Pages

          KERSEMI

          技術參數

          • OPN:

            IRFR024NTRLPBF/IRFR024NTRPBF

          • Qualification:

            Non-Automotive

          • Package name:

            DPAK/DPAK

          • VDS max:

            55 V

          • RDS (on) @10V max:

            75 m?/75 m?

          • ID @25°C max:

            17 A/17 A

          • QG typ @10V:

            13.3 nC/13.3 nC

          • Polarity:

            N

          • VGS(th) min:

            2 V/2 V

          • VGS(th) max:

            4 V/4 V

          • VGS(th):

            3 V/3 V

          • Technology:

            IR MOSFET?/IR MOSFET?

          供應商型號品牌批號封裝庫存備注價格
          IR
          22+
          SOT-252
          6000
          終端可免費供樣,支持BOM配單
          詢價
          IR
          23+
          SOT-252
          8000
          專注配單,只做原裝進口現(xiàn)貨
          詢價
          IR
          23+
          SOT-252
          7000
          詢價
          IR
          23+
          TO-252
          3200
          絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
          詢價
          IR
          01+
          SOT252/2.5
          5600
          全新原裝進口自己庫存優(yōu)勢
          詢價
          Fairchi
          24+
          DXPAK
          6000
          進口原裝正品假一賠十,貨期7-10天
          詢價
          IR
          24+
          SOT252
          1800
          原裝現(xiàn)貨假一罰十
          詢價
          IR
          24+
          TO-252
          29
          詢價
          IR
          24+
          SOT252
          5825
          公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
          詢價
          IR
          23+
          SOT-252
          5000
          原裝正品,假一罰十
          詢價
          更多IRFR供應商 更新時間2026-1-21 14:00:00
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