| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：1.768 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.2849 Mbytes 頁數(shù)：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.2849 Mbytes 頁數(shù)：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：1.768 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：1.768 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.2849 Mbytes 頁數(shù)：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU 文件：4.37106 Mbytes 頁數(shù)：9 Pages | KERSEMI | KERSEMI | ||
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Surface-mount (IRFR020, SiHFR020) ? Available in tape and reel ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation 文件：1.05947 Mbytes 頁數(shù)：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFETR Power MOSFET DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniq 文件：1.71489 Mbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU 文件：1.84644 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
技術(shù)參數(shù)
- OPN：
IRFR024NTRLPBF/IRFR024NTRPBF
- Qualification：
Non-Automotive
- Package name：
DPAK/DPAK
- VDS max：
55 V
- RDS (on) @10V max：
75 m?/75 m?
- ID @25°C max：
17 A/17 A
- QG typ @10V：
13.3 nC/13.3 nC
- Polarity：
N
- VGS(th) min：
2 V/2 V
- VGS(th) max：
4 V/4 V
- VGS(th)：
3 V/3 V
- Technology：
IR MOSFET?/IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
SOT-252 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
SOT-252 |
8000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
SOT-252 |
7000 |
詢價 | |||
I |
24+ |
DPAK |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
VISHAY/威世 |
22+ |
TO-252-3(DPAK) |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
VISHAY/威世 |
23+ |
TO252-3 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 | ||
INFINEON/英飛凌 |
25+ |
TO-252 |
188600 |
全新原廠原裝正品現(xiàn)貨 歡迎咨詢 |
詢價 | ||
FAIRCHILD/仙童 |
2026+ |
TO252 |
29955 |
進口原盤現(xiàn)貨/2K |
詢價 | ||
INFINOEN |
25+ |
TO-252-3 |
90000 |
一級代理進口原裝現(xiàn)貨、假一罰十價格合理 |
詢價 |
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