絲?。?strong>IRFR024；Package：TO252-2L；N-Channel Enhancement Mode MOSFET

Description The IRFR024NT uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =30 A RDS(ON)

文件：853.58 Kbytes 頁(yè)數(shù)：5 Pages

EVVOSEMI

翊歐

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：4.50222 Mbytes 頁(yè)數(shù)：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：1.98595 Mbytes 頁(yè)數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Surface-mount (IRFR024, SiHFR024) ? Straight lead (IRFU024, SiHFU024) ? Available in tape and reel ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99

文件：1.06651 Mbytes 頁(yè)數(shù)：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier provide the designed with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techni

文件：172.77 Kbytes 頁(yè)數(shù)：6 Pages

IRF

isc N-Channel MOSFET Transistor

文件：321.1 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

Power MOSFET

文件：1.04466 Mbytes 頁(yè)數(shù)：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.16522 Mbytes 頁(yè)數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.16522 Mbytes 頁(yè)數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

Dynamic dV/dt rating\nSurface-mount (IRFR024, SiHFR024)\nStraight lead (IRFU024, SiHFU024);

Vishay

威世