N-CHANNEL POWER MOSFET

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SAMSUNG

三星

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Surface-mount (IRFR014, SiHFR014) ? Straight lead (IRFU014, SiHFU014) ? Available in tape and reel ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techni

文件：172.07 Kbytes 頁(yè)數(shù)：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

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KERSEMI

isc N-Channel MOSFET Transistor

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ISC

無(wú)錫固電

Power MOSFET

文件：1.92902 Mbytes 頁(yè)數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.92902 Mbytes 頁(yè)數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

Dynamic dV/dt rating\nSurface-mount (IRFR014, SiHFR014)\nStraight lead (IRFU014, SiHFU014);

Vishay

威世

Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A)

Infineon

英飛凌