| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFL110 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Surface Mount ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Repetitive 文件：1.45555 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFL110 | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave solderin 文件：244.59 Kbytes 頁數(shù)：8 Pages | IRF | IRF | |
IRFL110 | Power MOSFET Surface-mount\nAvailable in tape and reel\nDynamic dV/dt rating; | Vishay 威世 | Vishay | |
IRFL110 | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A) | Infineon 英飛凌 | Infineon | |
HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave solderin 文件：216.93 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Surface Mount ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Repetitive 文件：1.45555 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Surface Mount ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Repetitive 文件：1.45555 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
N-Channel 100-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFETs ? 175 °C Maximum Junction Temperature ? Compliant to RoHS Directive 2002/95/EC 文件：1.46639 Mbytes 頁數(shù)：6 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Surface Mount ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Repetitive 文件：1.45555 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：2.02105 Mbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細參數(shù)
- 型號：
IRFL110
- 功能描述：
MOSFET N-Chan 100V 1.5 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
19+ |
SOT-223 |
16000 |
詢價 | |||
IR |
SOT-223 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價 | |||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
VISHAY/威世 |
2025+ |
SOT-223 |
5000 |
原裝進口價格優(yōu) 請找坤融電子! |
詢價 | ||
IR |
25+ |
SOT-223 |
3500 |
福安甌為您提供真芯庫存,真誠服務(wù) |
詢價 | ||
IR |
24+ |
SOT-223 |
6935 |
新進庫存/原裝 |
詢價 | ||
IR |
25+ |
PLCC44 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
I.R |
06+ |
原廠原裝 |
211 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
IR |
24+ |
SOT223 |
760 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
12+ |
SOT-223 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。 |
詢價 |
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