23A, 400V, 0.200 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c

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INTERSIL

Power MOSFET

FEATURES ? Dynamic dV/dt rated ? Repetitive avalanche rated ? Isolated central mounting hole ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides info

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VISHAYVishay Siliconix

威世威世科技公司

MegaMOS FET

Features ? Fast switching times ? International standard packages ? Low RDS (on) HDMOSTM process ? Rugged polysilicon gate cell structure ? High commuting dv/dt rating Applications ? DC choppers ? Motor Controls ? Switch-mode and resonant-mode ? Uninterruptable power supplies (UPS) Adva

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IXYS

艾賽斯

Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)

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IRF

isc N-Channel MOSFET Transistor

FEATURES ? Drain Current –ID= 23A@ TC=25℃ ? Drain Source Voltage- : VDSS= 400V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ? Fast Switching DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications.

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ISC

無錫固電

Avalanche-Energy-Rated N-Channel Power MOSFETs

The IRFP360 and IRFP362 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of opera tion These are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching re

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

Power MOSFET

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

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VISHAYVishay Siliconix

威世威世科技公司

23A, 400V, 0.200 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching con ? 23A, 400V\n? rDS(ON) = 0.200?\n? Single Pulse Avalanche Energy Rated\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance\n? Related Literature\n?? - TB334 “Guidelines for Soldering Surface Mount\n????? Components to PC Board;

Renesas

瑞薩

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特