Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Isolated central mounting hole ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides i

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=60V, Rds(on)=0.014ohm, Id=70*A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

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IRF

N-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Drain Current –ID= 70A@ TC=25℃ ? Drain Source Voltage- : VDSS= 60V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.014Ω (Max) ? Fast Switching

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ISC

無錫固電

Power MOSFET

文件：1.56179 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.56179 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.56651 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.59347 Mbytes 頁數(shù)：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

? Dynamic dV/dt rating\n? Isolated central mounting hole\n? 175 °C operating temperature;

Vishay

威世

Power MOSFET(Vdss=60V, Rds(on)=0.014ohm, Id=70*A)

Infineon

英飛凌