15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

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INTERSIL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Isolated central mounting hole ? Fast switching ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts th

文件：267.34 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=15A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Isolated Central Mounting Hole

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IRF

isc N-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Drain Current –ID= 15A@ TC=25℃ ? Drain Source Voltage- : VDSS= 250V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) ? Fast Switching

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ISC

無錫固電

Power MOSFET

文件：940.09 Kbytes 頁數(shù)：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? Isolated central mounting hole;

Vishay

威世

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=15A)

Infineon

英飛凌

15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

Renesas

瑞薩

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Isolated central mounting hole ? Fast switching ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts th

文件：267.34 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司