200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. Features ? 32A, 200V, RDS(on)= 0.085?@VGS= 10 V ? Low gate charge ( typical 95 nC) ? Low Crss ( typical 75 pF) ? Fast switching ? 100 ava

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FAIRCHILD

仙童半導體

N-Channel Power Mosfets

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SAMSUNG

三星

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The TO-220 package is universially preferred for commercial-industrial applications where higher power leve

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Isolated central mounting hole ? Fast switching ? Ease of Paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

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VISHAYVishay Siliconix

威世威世科技公司

Standard Power MOSFET

N-Channel Enhancement Mode Features ? International standard package JEDEC TO-247 AD ? Low RDS (on) HDMOSTM process ? Rugged polysilicon gate cell structure ? High commutating dv/dt rating ? Fast switching times Applications ? Switch-mode and resonant-mode power supplies ? Motor controls

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IXYS

艾賽斯

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: ? Fast switching times ? Low RDS(on) HDMOS? process ? Rugged polysilicon gate cell structure ? Excellent high voltage stability ? Low input capacitance ? Improved high temperature reliability APPLICATIONS: ? Switching power supplies ? Motor controls ? Audio Amplifiers ? Invert

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IXYS

艾賽斯

N-Channel(Hexfet Transistors)

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IRF

Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

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IRF

iscN-Channel MOSFET Transistor

DESCRIPTION · Designed for use in switch mode power supplies and general purpose applications. FEATURES · Drain Current –ID= 33A@ TC=25℃ · Drain Source Voltage- : VDSS= 200V(Min) · Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) · Fast Switching

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ISC

無錫固電

N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

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STMICROELECTRONICS

意法半導體